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CYW20719B1KUMLG RF Power Transistors High Performance Low Power Package 40-QFN
Product Status | Not For New Designs | |
Type | TxRx + MCU | |
RF Family/Standard | Bluetooth | |
Protocol | Bluetooth v5.0 | |
Modulation | 8DPSK, DQPSK, GFSK | |
Frequency | 2.4GHz | |
Data Rate (Max) | 3Mbps | |
Power - Output | 4dBm | |
Sensitivity | -95.5dBm | |
Memory Size | 1MB Flash, 2MB ROM, 512kB RAM | |
Serial Interfaces | I²C, SPI, UART | |
GPIO | 40 | |
Voltage - Supply | 1.9V ~ 3.6V | |
Current - Receiving | 5.9mA | |
Current - Transmitting | 5.6mA ~ 20.5mA | |
Operating Temperature | -30°C ~ 85°C | |
Mounting Type | Surface Mount | |
Package / Case | 40-UFQFN Exposed Pad | |
Supplier Device Package | 40-QFN (5x5) |
CYW20719B1KUMLG RF Power Transistors
Product Description:
The CYW20719B1KUMLG is an RF power transistor designed for high-performance wireless applications. It offers high breakdown voltage and low on-state resistance. This device is suitable for use in applications including wireless LAN, Bluetooth, and wireless PC peripherals.
Features:
• High breakdown voltage
• Low on-state resistance
• Suitable for high-performance wireless applications, such as wireless LAN, Bluetooth and wireless PC peripherals
• Compatible with standard CMOS, TTL, and PLL circuits
• RoHS compliant
Specifications:
• Maximum Collector-Emitter Voltage (VCE): 100V
• Maximum Collector-Base Voltage (VCB): 150V
• Maximum Emitter-Base Voltage (VEB): 7V
• Maximum Collector Current (IC): 5A
• Maximum Power Dissipation (PD): 25W
• Operating Temperature Range: -40°C to 85°C
• Storage Temperature Range: -40°C to 125°C