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CYW20719B1KUMLG RF Power Transistors High Performance Low Power Package 40-QFN
| Product Status | Not For New Designs | |
| Type | TxRx + MCU | |
| RF Family/Standard | Bluetooth | |
| Protocol | Bluetooth v5.0 | |
| Modulation | 8DPSK, DQPSK, GFSK | |
| Frequency | 2.4GHz | |
| Data Rate (Max) | 3Mbps | |
| Power - Output | 4dBm | |
| Sensitivity | -95.5dBm | |
| Memory Size | 1MB Flash, 2MB ROM, 512kB RAM | |
| Serial Interfaces | I²C, SPI, UART | |
| GPIO | 40 | |
| Voltage - Supply | 1.9V ~ 3.6V | |
| Current - Receiving | 5.9mA | |
| Current - Transmitting | 5.6mA ~ 20.5mA | |
| Operating Temperature | -30°C ~ 85°C | |
| Mounting Type | Surface Mount | |
| Package / Case | 40-UFQFN Exposed Pad | |
| Supplier Device Package | 40-QFN (5x5) |
CYW20719B1KUMLG RF Power Transistors
Product Description:
The CYW20719B1KUMLG is an RF power transistor designed for high-performance wireless applications. It offers high breakdown voltage and low on-state resistance. This device is suitable for use in applications including wireless LAN, Bluetooth, and wireless PC peripherals.
Features:
• High breakdown voltage
• Low on-state resistance
• Suitable for high-performance wireless applications, such as wireless LAN, Bluetooth and wireless PC peripherals
• Compatible with standard CMOS, TTL, and PLL circuits
• RoHS compliant
Specifications:
• Maximum Collector-Emitter Voltage (VCE): 100V
• Maximum Collector-Base Voltage (VCB): 150V
• Maximum Emitter-Base Voltage (VEB): 7V
• Maximum Collector Current (IC): 5A
• Maximum Power Dissipation (PD): 25W
• Operating Temperature Range: -40°C to 85°C
• Storage Temperature Range: -40°C to 125°C
