HMC8038LP4CETR RF Power Transistors - High Performance And Reliability

1. HMC8038LP4CETR RF Power Transistor

2. Features:

- High Output Power: > +41 dBm at 1 GHz
- High 3rd Order Intercept Point: > +50 dBm at 1 GHz
- High Gain: > 18 dB at 1 GHz
- Low Noise: < 0.5 dB at 1 GHz
- Wide Bandwidth: > 400 MHz to 4 GHz

3. Applications:

- High Power Amplifier
- Broadband Power Amplifier
- Low Noise Amplifier
- Wideband Power Amplifier
4. Package:

4-Pin Ceramic Leadless Package (C4LP)

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Service >>>

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