SI4702-C19-GMR RF Power Transistor - High Performance Reliable And Durable

SI4702-C19-GMR RF Power Transistors

Product Overview:

The SI4702-C19-GMR is a high performance RF power transistor designed for RF power amplifier applications in industrial and consumer applications. This device is suitable for applications such as cellular base stations, repeaters, and consumer wireless applications. It is designed with a high breakdown voltage of 30V, a maximum drain current of 10.5A, and an on-state resistance of 0.065Ω.

Product Features:

• High breakdown voltage: 30V
• Maximum drain current: 10.5A
• On-state resistance: 0.065Ω
• Low gate drive voltage: 3V
• Low gate input capacitance: 44.3pF
• High power gain: 18dB
• Low thermal resistance: 0.66°C/W
• RoHS compliant

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