IKW50N60DTPXKSA1 Power Amplifier Module High Voltage High Power Capacity

IKW50N60DTPXKSA1 IGBT Power Module – High Voltage High Power Capacity

IKW50N60DTPXKSA1 IGBT Power Module

Product Description:

The IKW50N60DTPXKSA1 IGBT Power Module is a high-performance, low-loss, insulated-gate bipolar transistor that provides superior performance in high-current switching applications. It features an integrated protection circuit for over-current and over-temperature conditions, and a low saturation voltage for improved efficiency. The module also features a wide operating temperature range and a high-frequency switching capability.

Features:

• Low-loss, insulated-gate bipolar transistor

• Integrated protection circuit for over-current and over-temperature conditions

• Low saturation voltage for improved efficiency

• Wide operating temperature range

• High-frequency switching capability

• Maximum current rating: 50A

• Maximum breakdown voltage: 600V

• Maximum power dissipation: 140W

• Maximum junction temperature: 175°C

• Operating frequency range: 200kHz - 30MHz

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