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MT29F2G08ABAEAH4-IT:E Flash Memory Chips
63-VFBGA High Performance Computing Storage Applications
Technology | FLASH - NAND | |
Memory Size | | |
Memory Organization | 256M x 8 | |
Memory Interface | Parallel | |
Write Cycle Time - Word, Page | - | |
Voltage - Supply | 2.7V ~ 3.6V | |
Operating Temperature | -40°C ~ 85°C (TA) | |
Mounting Type | | |
Package / Case | | |
Supplier Device Package | 63-VFBGA (9x11) |
MT29F2G08ABAEAH4-IT:E Flash Memory Chips 63-VFBGA
This is a high-performance 3V NAND Flash memory chip designed for a variety of applications, including digital cameras, mobile phones, personal digital assistants and other portable devices. It features a 2Gbit density in 63-VFBGA package. This chip offers advanced features such as a high speed serial peripheral interface (SPI) and multiple I/O modes to meet the needs of various applications. It also includes an on-chip ECC (Error Correction Code) and a write protection feature to ensure reliable data storage. The device is RoHS compliant and provides high reliability, low power consumption and a wide temperature range. It is ideal for embedded applications that require high performance, low power consumption and high reliability.
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