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IRF840APBF MOSFET High-Performance Power Electronics for Enhanced Reliability and Efficiency
|  			 FET Type  			 |  			 			 |  		|
|  			 Technology  			 |  			 			 MOSFET (Metal Oxide)  			 |  			 			 |  		
|  			 Drain to Source Voltage (Vdss)  			 |  			 			 |  		|
|  			 Current - Continuous Drain (Id) @ 25°C  			 |  			 			 |  		|
|  			 Drive Voltage (Max Rds On, Min Rds On)  			 |  			 			 10V  			 |  			 			 |  		
|  			 Rds On (Max) @ Id, Vgs  			 |  			 			 850mOhm @ 4.8A, 10V  			 |  			 			 |  		
|  			 Vgs(th) (Max) @ Id  			 |  			 			 4V @ 250µA  			 |  			 			 |  		
|  			 Gate Charge (Qg) (Max) @ Vgs  			 |  			 			 38 nC @ 10 V  			 |  			 			 |  		
|  			 Vgs (Max)  			 |  			 			 ±30V  			 |  			 			 |  		
|  			 Input Capacitance (Ciss) (Max) @ Vds  			 |  			 			 1018 pF @ 25 V  			 |  			 			 |  		
|  			 FET Feature  			 |  			 			 -  			 |  			 			 |  		
|  			 Power Dissipation (Max)  			 |  			 			 125W (Tc)  			 |  			 			 |  		
|  			 Operating Temperature  			 |  			 			 -55°C ~ 150°C (TJ)  			 |  			 			 |  		
|  			 Mounting Type  			 |  			 			 |  		|
|  			 Supplier Device Package  			 |  			 			 TO-220AB  			 |  			 			 |  		
|  			 Package / Case  			 |  			
Parameters:
Packaging: TO-220AB
 Number of Pins: 3
 Configuration: Single
 Drain to Source Voltage (Vdss): 500V
 Current - Continuous Drain (Id) @ 25°C: 11A
 Rds On (Max) @ Id, Vgs: 10 mOhm @ 8A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250μA
 Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
 Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
 Power - Max: 40W
 Operating Temperature: -55°C ~ 175°C (TJ)
 Mounting Type: Through Hole
 Polarity: N-Channel
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