Shenzhen Sai Collie Technology Co., Ltd.
Shenzhen Sai Collie Technology Co., Ltd.
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IRF6665TRPBF MOSFET Power Electronics
High-Performance Low-RDS(on) for Improved Efficiency
| FET Type | | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 62mOhm @ 5A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | | |
| Supplier Device Package | DIRECTFET™ SH | |
| Package / Case |
Product Description:
The IRF6665TRPBF is a power MOSFET from IRF Technologies. This N-Channel MOSFET is designed to handle up to 55 volts and has a low on-resistance of 3.2 milliohms. The maximum drain current is 55 amps, while the maximum power dissipation is up to 740 watts. The device is packaged in a TO-220AB package.
Product Parameters:
- Type: N-Channel MOSFET
- Voltage: 55V
- On-resistance: 3.2 milliohms
- Maximum Drain Current: 55 Amps
- Maximum Power Dissipation: 740 Watts
- Package: TO-220AB
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