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IPB60R380C6 MOSFET Power Electronic
Module High-Performance Low On-Resistance
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 380mOhm @ 3.8A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 320µA | |
Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 100 V | |
FET Feature | - | |
Power Dissipation (Max) | 83W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | PG-TO263-3 | |
Package / Case |
Features:
• Ultra low on-resistance RDS(on)
• Low gate charge Qg
• Low input capacitance Ciss
• Fast switching speed
• 100% avalanche tested
Absolute Maximum Ratings:
• Gate-Source Voltage(VGS): ±20V
• Continuous Drain Current(ID): 48A
• Power Dissipation(PD): 350W
• Operating and Storage Temperature(TJ and Tstg): -55 to +150°C
Thermal Characteristics:
• Thermal Resistance Junction-to-Case(RθJC): 0.8°C/W
• Thermal Resistance Junction-to-Ambient(RθJA): 15°C/W
Electrical Characteristics:
• Drain-Source Breakdown Voltage(V(BR)DSS): 60V
• Static Drain-Source On-Resistance(RDS(on)): 0.38Ω
• Gate Threshold Voltage(VGS(th)): 2.2V
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