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SFH6156-2T MOSFET Power Electronics
Optoisolator Transistor Output 5300Vrms Channel Package 4-SMD
Voltage - Isolation | 5300Vrms | |
Current Transfer Ratio (Min) | 63% @ 10mA | |
Current Transfer Ratio (Max) | 125% @ 10mA | |
Turn On / Turn Off Time (Typ) | 3µs, 2.3µs | |
Rise / Fall Time (Typ) | 2µs, 2µs | |
Input Type | DC | |
Output Type | Transistor | |
Voltage - Output (Max) | 70V | |
Current - Output / Channel | 50mA | |
Voltage - Forward (Vf) (Typ) | 1.25V | |
Current - DC Forward (If) (Max) | 60 mA | |
Vce Saturation (Max) | 400mV | |
Operating Temperature | -55°C ~ 100°C | |
Mounting Type | Surface Mount | |
Package / Case | 4-SMD, Gull Wing | |
Supplier Device Package | 4-SMD |
Description: This MOSFET is a N-channel enhancement mode power field effect transistor with a low on-state resistance. It is suitable for use in a wide range of applications including switching, amplifiers, and power supplies.
Features:
• Low on-state resistance
• High speed switching
• Low drain-source capacitance
• High input impedance
• Low thermal resistance
• Low gate-source leakage current
Specifications:
• Drain-Source Voltage (Vdss): -100V
• Gate-Source Voltage (Vgss): -20V
• Drain Current (Id): -1.2A
• Drain-Source On-Resistance (Rds(on)): 0.07ohm
• Transconductance (gm): 8.0mS
• Power Dissipation (Pd): 1.5W
• Operating Temperature: -55°C to 150°C
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