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FDMC8882 MOSFET Power Electronics
The FDMC8882 is a high performance and versatile power MOSFET device from Fairchild Semiconductor. With a breakdown voltage of 60V, this device is ideal for use in high voltage applications such as automotive, industrial and medical. It features a low on-resistance of 0.045 Ω, fast switching speeds and low capacitances. This device also offers low gate charge, thereby minimizing switching losses.
Features:
• Breakdown Voltage: 60V
• On-Resistance: 0.045 Ω
• Low Gate Charge
• Low Capacitances
• Fast Switching Speeds
• High Performance
• Versatile
• Ideal for Automotive, Industrial and Medical Applications
Product Status | Active | |
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 14.3mOhm @ 10.5A, 10V | |
Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 945 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.3W (Ta), 18W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 8-MLP (3.3x3.3) | |
Package / Case | | |
Base Product Number |
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