Shenzhen Sai Collie Technology Co., Ltd.

Shenzhen Sai Collie Technology Co., Ltd.

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Mosfet Tube NTJS3151PT1G High Voltage And Low On Resistance TO-252 package

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Shenzhen Sai Collie Technology Co., Ltd.
City:shenzhen
Country/Region:china
Contact Person:DANDAN
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Mosfet Tube NTJS3151PT1G High Voltage And Low On Resistance TO-252 package

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Brand Name :onsemi
Model Number :NTJS3151PT1G
Place of Origin :Multi-origin
MOQ :1
Price :Negotiable
Payment Terms :L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :999999
Delivery Time :1-7days
Packaging Details :Standard
Product Type :MOSFET Power Electronics
Manufacturer :onsemi
Manufacturer Product Number :NTJS3151PT1G
Description :MOSFET P-CH 12V 2.7A SC88/SC70-6
Manufacturer Standard Lead Time :1-7days
Detailed Description :P-Channel 12 V 2.7A (Ta) 625mW (Ta) Surface Mount SC-88/SC70-6/SOT-363
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NTJS3151PT1G MOSFET Power Electronics

The NTJS3151PT1G is a N-channel MOSFET power electronic device designed for use in high efficiency power conversion circuits such as DC/DC converters, motor drives, and other power management applications. The device features a low on-state resistance of 0.38 ohms, a low reverse transfer capacitance of 0.7 pF, and a maximum continuous drain current of 11.5 A. The device also features excellent thermal performance with a maximum junction temperature of 175°C and a maximum gate-source voltage of 20V. The device is available in the industry standard TO-252 package.

Key Features:


• Low on-state resistance: 0.38 ohms
• Low reverse transfer capacitance: 0.7 pF
• Maximum continuous drain current: 11.5 A
• Maximum junction temperature: 175°C
• Maximum gate-source voltage: 20V
• Industry standard TO-252 package

Product Status
Active
FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
60mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
8.6 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
850 pF @ 12 V
FET Feature
-
Power Dissipation (Max)
625mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Supplier Device Package
SC-88/SC70-6/SOT-363
Package / Case
Base Product Number

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Mosfet Tube NTJS3151PT1G High Voltage And Low On Resistance TO-252 package

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