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NTJS3151PT1G MOSFET Power Electronics
The NTJS3151PT1G is a N-channel MOSFET power electronic device designed for use in high efficiency power conversion circuits such as DC/DC converters, motor drives, and other power management applications. The device features a low on-state resistance of 0.38 ohms, a low reverse transfer capacitance of 0.7 pF, and a maximum continuous drain current of 11.5 A. The device also features excellent thermal performance with a maximum junction temperature of 175°C and a maximum gate-source voltage of 20V. The device is available in the industry standard TO-252 package.
Key Features:
• Low on-state resistance: 0.38 ohms
• Low reverse transfer capacitance: 0.7 pF
• Maximum continuous drain current: 11.5 A
• Maximum junction temperature: 175°C
• Maximum gate-source voltage: 20V
• Industry standard TO-252 package
Product Status | Active | |
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Rds On (Max) @ Id, Vgs | 60mOhm @ 3.3A, 4.5V | |
Vgs(th) (Max) @ Id | 1.2V @ 100µA | |
Gate Charge (Qg) (Max) @ Vgs | 8.6 nC @ 4.5 V | |
Vgs (Max) | ±12V | |
Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 12 V | |
FET Feature | - | |
Power Dissipation (Max) | 625mW (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | SC-88/SC70-6/SOT-363 | |
Package / Case | | |
Base Product Number |
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