Shenzhen Sai Collie Technology Co., Ltd.

Shenzhen Sai Collie Technology Co., Ltd.

Manufacturer from China
Active Member
3 Years
Home / Products / MOSFET Power Electronics /

Power Mosfet IPD60R2K1CEAUMA1 High Power Low On Resistance Power Switching

Contact Now
Shenzhen Sai Collie Technology Co., Ltd.
City:shenzhen
Country/Region:china
Contact Person:DANDAN
Contact Now

Power Mosfet IPD60R2K1CEAUMA1 High Power Low On Resistance Power Switching

Ask Latest Price
Video Channel
Brand Name :Infineon Technologies
Model Number :IPD60R2K1CEAUMA1
Place of Origin :Multi-origin
MOQ :1
Price :Negotiable
Payment Terms :L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :999999
Delivery Time :1-7days
Packaging Details :Standard
Product Type :MOSFET Power Electronics
Manufacturer :Infineon Technologies
Manufacturer Product Number :IPD60R2K1CEAUMA1
Description :MOSFET N-CH 600V 2.3A TO252-3
Manufacturer Standard Lead Time :1-7days
Detailed Description :N-Channel 600 V 2.3A (Tc) 38W (Tc) Surface Mount PG-TO252-3
more
Contact Now

Add to Cart

Find Similar Videos
View Product Description

IPD60R2K1CEAUMA1 MOSFET Power Electronics

Product Description:


The IPD60R2K1CEAUMA1 is a N-channel Power MOSFET, optimized for power switching applications. This device is designed using advanced Trench MOSFET technology for excellent RDS(ON) and low gate charge. It provides superior switching performance with fast switching times and low-level gate charge. With a wide range of VDSS, this device is suitable for a variety of power applications.

Features:


• N-Channel Power MOSFET
• Advanced Trench MOSFET technology
• Optimized for power switching applications
• Low RDS(ON)
• Low gate charge
• Fast switching times
• Low-level gate charge
• Wide range of VDSS
• Suitable for a variety of power applications

Specifications:


• Drain-Source Voltage (VDSS): 60V
• Drain Current (ID): 2A
• RDS(ON): 1.45mΩ
• Gate-Source Voltage (VGS): ±20V
• Maximum Power Dissipation (PD): 2.2W
• Operating Temperature: -55°C to +150°C

Product Status
Active
FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.1Ohm @ 760mA, 10V
Vgs(th) (Max) @ Id
3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs
6.7 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
38W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Supplier Device Package
PG-TO252-3
Package / Case
Base Product Number

Why buy from us >>> Fast / Safely / Conveniently


• SKL is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong, Sigapore , Canada . Offer business, service, resourcing and information for our global member.
• Goods are ensured the highest quality possible and are delivered to our customers all over the world with speed and precision.

How to buy >>>


• Contact us by email & sent your inquire with your Transport destination .
• Online chat, the commissioner would be responded ASAP.

Service >>>


• Forwarder Shipment to world-wide, DHL ,TNT ,UPS,FEDEX etc. buyer don`t need to worry about shipping problem
• We will try to respond as quickly as possible. But due to time zone difference, please allow up to 24 hours to get your mail replied. The products were tested by some devices or software, we ensure that there is no quality problems.
• We are committed to providing fast, convenient and safe transportation service to global buyer.

Power Mosfet IPD60R2K1CEAUMA1 High Power Low On Resistance Power Switching

Inquiry Cart 0