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IRF6613TRPBF MOSFET Power Electronics
Product Description:
The IRF6613TRPBF is a N-Channel Enhancement Mode MOSFET Power Electronic device, designed for high frequency switching applications. This device offers low on-resistance and high current carrying capacity, making it an ideal choice for power management and conversion of high frequency circuits.
Features:
• Low On-Resistance
• High Current Carrying Capacity
• High Frequency Switching
• RoHS Compliant
Specifications:
• Polarity: N-Channel
• Voltage: 30V
• Drain to Source Voltage (Vdss): 30V
• Gate Threshold Voltage (Vgs): -4V
• Drain Current (Id): -6A
• Continuous Drain Current (Id): -6A
• Power Dissipation (Pd): 130W
• Transistor Case Style: TO-220AB
• No. of Pins: 3
• Operating Temperature Range: -55°C to +150°C
Product Status | Active | |
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 3.4mOhm @ 23A, 10V | |
Vgs(th) (Max) @ Id | 2.25V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 4.5 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 5950 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) | |
Operating Temperature | -40°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | DIRECTFET™ MT | |
Package / Case | | |
Base Product Number |
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