Shenzhen Sai Collie Technology Co., Ltd.

Shenzhen Sai Collie Technology Co., Ltd.

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IRFB4229PBF Mosfet In Power Electronics High Current High Frequency Low Loss

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Shenzhen Sai Collie Technology Co., Ltd.
City:shenzhen
Country/Region:china
Contact Person:DANDAN
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IRFB4229PBF Mosfet In Power Electronics High Current High Frequency Low Loss

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Brand Name :Infineon Technologies
Model Number :IRFB4229PBF
Place of Origin :Multi-origin
MOQ :1
Price :Negotiable
Payment Terms :L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :999999
Delivery Time :1-7days
Packaging Details :Standard
Product Type :MOSFET Power Electronics
Manufacturer :Infineon Technologies
Manufacturer Product Number :IRFB4229PBF
Description :MOSFET N-CH 250V 46A TO220AB
Manufacturer Standard Lead Time :1-7days
Detailed Description :N-Channel 250 V 46A (Tc) 330W (Tc) Through Hole TO-220AB
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IRFB4229PBF Power MOSFET

Product Features:

• N-Channel Enhancement Mode
• 100V, 37A, RDS(on) = 0.065Ω
• Low Gate Charge (Typ. 11nC)
• Low Crss (Typ. 0.13A)
• Fast Switching
• RoHS Compliant
• Lead-Free
• Halogen-Free

Product Description:

The IRFB4229PBF is a N-Channel MOSFET designed for power switching applications. It features an on-resistance of 0.065Ω, a current rating of 37A, and an operating voltage of 100V. The device has a low gate charge of 11nC and a low Crss of 0.13A. It is RoHS Compliant and Lead-Free/Halogen-Free.

Product Status
Active
FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
46mOhm @ 26A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
4560 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
330W (Tc)
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Supplier Device Package
TO-220AB
Package / Case
Base Product Number

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IRFB4229PBF Mosfet In Power Electronics High Current High Frequency Low Loss

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