Shenzhen Sai Collie Technology Co., Ltd.
Shenzhen Sai Collie Technology Co., Ltd.
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Single P-Channel (–1.5 V) Specified PowerTrench® MOSFETSingle P-Channel (–1.5 V) Specified PowerTrench® FDC658AP MOSFET Power Electronics Single P-Channel POWERTRENCH Logic Level -30 V -4 A 50 m
P-Channel 1.8V Specified PowerTrench MOSFET–20 V, –0.83 A, 0.5 Ω
–20 V, –0.83 A, 0.5 ΩSingle P-Channel (–1.5 V) Specified PowerTrench® MOSFET–20 V, –0.83 A, 0.5
| FET Type | | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 8.1 nC @ 5 V | |
| Vgs (Max) | ±25V | |
| Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 15 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1.6W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | | |
| Supplier Device Package | SuperSOT™-6 | |
| Package / Case |
General Description
This P−Channel Logic Level MOSFET is produced using onsemi
advanced POWERTRENCH process. It has been optimized for battery
power management applications.
Features
• Max RDS(on) = 50 m @ VGS = −10 V, ID = −4 A
• Max RDS(on) = 75 m @ VGS = −4.5 V, ID = −3.4 A
• Low Gate Charge
• High Performance Trench Technology for Extremely Low RDS(on)
• Pb−Free, Halide Free and RoHS Compliant
Applications
• Battery Management
• Load Switch
• Battery Protection
• DC−DC Conversion
