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MOSFET Power Electronics MGSF2N02ELT1G SOT-23 Package 2.8 A 20 VN Channel Enhancement Mode MOSFET Transistor
| FET Type | | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 3.6A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 3.5 nC @ 4 V | |
| Vgs (Max) | ±8V | |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 5 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1.25W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | | |
| Supplier Device Package | SOT-23-3 (TO-236) | |
| Package / Case |
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry.
Features
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature SOT−23 Surface Mount Package Saves Board Space
• IDSS Specified at Elevated Temperature
• AEC Q101 Qualified and PPAP Capable − MVSF2N02EL
• These Devices are Pb−Free and are RoHS Compliant
Applications
• DC−DC Converters
• Power Management in Portable and Battery Powered Products, ie:
Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
