Shenzhen Sai Collie Technology Co., Ltd.
Shenzhen Sai Collie Technology Co., Ltd.
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IPP045N10N3GXKSA1 MOSFET Power
Electronics NChannel MOSFET for Switching Applications
| FET Type | | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 100A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA | |
| Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 8410 pF @ 50 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 214W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | | |
| Supplier Device Package | PG-TO220-3 | |
| Package / Case |
Description:
The IPP045N10N3GXKSA1 MOSFET is designed for high speed switching applications. It is an N-Channel enhancement mode MOSFET with an avalanche energy rated of 70mJ, a drain current rating of 45A, a drain-source on-state resistance of 0.010 Ohm, and a gate charge rating of 31nC. It also has a threshold voltage of 2.0V and a total gate charge of 46nC.
In addition, it features a maximum drain-source voltage of 45V, a maximum drain-source on-state resistance of 0.013 Ohm, and a maximum gate-source voltage of 20V. The MOSFET is housed in a PowerPAK SO-8N package, which is RoHS compliant.This is an N-channel MOSFET with a maximum drain-source voltage of 100V. It has an RDS(on) of 0.45Ω and an ID of 45A. It is ideal for high-speed switching applications.
Features:
• Maximum drain-source voltage: 100V
• RDS(on): 0.45Ω
• ID: 45A
• Fast switching speed
• Low gate threshold voltage
• Low on-state resistance
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