BSC093N04LSG MOSFET Power Electronics High Performance Low Voltage Power Electronics Solution

BSC093N04LSG MOSFET Power

Electronics High Performance Low Voltage Power Electronics Solution

Description:

The BSC093N04LSG is a N-channel enhancement mode MOSFET with low on-resistance and fast switching characteristics. It is designed for use in high current switching applications. This MOSFET has a maximum drain-source voltage of 30V and a maximum drain current of 75A. It also has a breakdown voltage of 35V and a maximum power dissipation of 6.3W. It is available in a TO-220AB package and is RoHS compliant.

Features:

• Low on-resistance
• Fast switching
• Maximum drain-source voltage: 30V
• Maximum drain current: 75A
• Breakdown voltage: 35V
• Maximum power dissipation: 6.3W
• TO-220AB package
• RoHS compliant

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