Shenzhen Sai Collie Technology Co., Ltd.
Shenzhen Sai Collie Technology Co., Ltd.
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Power MOSFET FDB024N08BL7 for High-Efficiency Power Electronics Applications Single N-Channel PQFN8 120 V 4.0 m 114 A
| FET Type | | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 100A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 178 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 13530 pF @ 40 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 246W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | | |
| Supplier Device Package | TO-263-7 | |
| Package / Case |
Product Listing:
FDB024N08BL7 – ON Semiconductor N-Channel MOSFET Power Electronics
Features:
• N-Channel Enhancement Mode MOSFET
• Low On-State Resistance
• Low Gate Charge
• High Current Capability
• Fast Switching
• Avalanche Rated
Specifications:
• Drain-Source Voltage: VDSS = 24 V
• Gate-Source Voltage: VGSS = ±20 V
• On-State Resistance: RDS(on) = 0.0085 Ω (Typical)
• Drain Current: ID = 8 A (Continuous)
• Power Dissipation: Pd = 24.5 W
• Operating Temperature Range: -55°C to +150°C
• Packaging: TO-220
