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BSC016N06NSATMA1 MOSFET Power Electronics N-Channel OptiMOSTM Power-MOSFET 60V
| FET Type | | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 50A, 10V | |
| Vgs(th) (Max) @ Id | 2.8V @ 95µA | |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 5200 pF @ 30 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 2.5W (Ta), 139W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | | |
| Supplier Device Package | PG-TDSON-8 FL | |
| Package / Case |
Features
•Optimizedforsynchronousrectification
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•Highersolderjointreliabilityduetoenlargedsourceinterconnection
