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BSC123N08NS3GATMA1 MOSFET Power Electronics N-Channel 80 V OptiMOSTm3 Package 8-PowerTDFN
| FET Type | | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Rds On (Max) @ Id, Vgs | 12.3mOhm @ 33A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 33µA | |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1870 pF @ 40 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 2.5W (Ta), 66W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | | |
| Supplier Device Package | PG-TDSON-8-1 | |
| Package / Case |
Features:
ldeal for high frequency switching and sync. rec.
Optimized technology for DC/DC converters
Excellent gate charge x R ps(on) product (FOM)
Superior thermal resistance
N-channel, normal level
100% avalanche tested
Pb-free plating; RoHS compliant
Qualified according to JEDEC1' for target applications
Halogen-free according to lEC61249-2-21
