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BSC123N08NS3GATMA1 MOSFET Power Electronics N-Channel 80 V OptiMOSTm3 Package 8-PowerTDFN
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 12.3mOhm @ 33A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 33µA | |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1870 pF @ 40 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta), 66W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | PG-TDSON-8-1 | |
Package / Case |
Features:
ldeal for high frequency switching and sync. rec.
Optimized technology for DC/DC converters
Excellent gate charge x R ps(on) product (FOM)
Superior thermal resistance
N-channel, normal level
100% avalanche tested
Pb-free plating; RoHS compliant
Qualified according to JEDEC1' for target applications
Halogen-free according to lEC61249-2-21