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BSZ099N06LS5ATMA1 MOSFET Power Electronics N-Channel OptiMOSTMPower-Transistor 60V Package PG-TSDSON-8 FL
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 9.9mOhm @ 20A, 10V | |
Vgs(th) (Max) @ Id | 2.3V @ 14µA | |
Gate Charge (Qg) (Max) @ Vgs | 3.1 nC @ 4.5 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 30 V | |
FET Feature | Standard | |
Power Dissipation (Max) | 36W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | PG-TSDSON-8-FL | |
Package / Case |
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec.
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21