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BSS306NH6327XTSA1 MOSFET Power Electronics OptiMOS™2 Small-Signal-Transistor N-Channel Package SOT-23
| FET Type | | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 57mOhm @ 2.3A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 11µA | |
| Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 5 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 275 pF @ 15 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 500mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | | |
| Supplier Device Package | PG-SOT23 | |
| Package / Case |
Features
• N-channel
• Enhancement mode
• Logic level (4.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
