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BSS214NH6327XTSA1 MOSFET Power Electronics N-channel OptiMOS™2 Small-Signal-Transistor Package TO-23
| FET Type | | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 1.5A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.2V @ 3.7µA | |
| Gate Charge (Qg) (Max) @ Vgs | 0.8 nC @ 5 V | |
| Vgs (Max) | ±12V | |
| Input Capacitance (Ciss) (Max) @ Vds | 143 pF @ 10 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 500mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | | |
| Supplier Device Package | PG-SOT23 | |
| Package / Case |
Features
• N-channel
• Enhancement mode
• Super Logic level (2.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
