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FCD360N65S3R0 MOSFET Power Electronics
D-PAK Package N-Channel SUPERFET III Easy Drive 650V 10A 360m
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 360mOhm @ 5A, 10V | |
Vgs(th) (Max) @ Id | 4.5V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 730 pF @ 400 V | |
FET Feature | - | |
Power Dissipation (Max) | 83W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | D-PAK (TO-252) | |
Package / Case |
Description
SUPERFETIII MOSFET is ON Semiconductor’s brand−new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.Consequently, SUPERFET III MOSFET Easy drive series helpsmanage EMI issues and allows for easier design implementation.
Features
• 700 V @ TJ= 150C
• Typ. RDS(on)= 310 m
• Ultra Low Gate Charge (Typ. Qg = 18 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.)= 173 pF)
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Computing / Display Power Supplies
• Telecom / Server Power Supplies
• Industrial Power Supplies
• Lighting / Charger / Adapter
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