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FDS4685 MOSFET Power Electronics 8-SOIC Package 40V P-Channel power management applications
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 27mOhm @ 8.2A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 5 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1872 pF @ 20 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 8-SOIC | |
Package / Case |
Features
■ –8.2 A, –40 V RDS(ON) = 0.027 Ω @ VGS = –10 V RDS(ON) = 0.035 Ω @ VGS = –4.5 V
■ Fast switching speed
■ High performance trench technology for extremely low RDS(ON)
■ High power and current handling capability
Applications
■ Power management
■ Load switch
■ Battery protection
General Description
This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It has been
optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V).
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