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N-Channel PowerTrench
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 1.2mOhm @ 50A, 10V | |
Vgs(th) (Max) @ Id | 2V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 4.5 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 8900 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 200W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 5-DFN (5x6) (8-SOFL) | |
Package / Case |
Features
• Small Footprint (5x6 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• NVMFS5C604NLWF − Wettable Flank Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant