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FDD86250-F085 MOSFET Power Electronics
TO-252-3 Package N-Channel Sheilded Gate PowerTrench Distributed Architectures
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 22mOhm @ 20A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 75 V | |
FET Feature | - | |
Power Dissipation (Max) | 160W (Tj) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | | |
Supplier Device Package | TO-252AA | |
Package / Case |
Features
Typical RDS(on) = 19.4 mΩ at VGS = 10V, ID = 20 A
Typical Qg(tot) = 28 nC at VGS = 10V, ID = 40 A
UIS Capability
RoHS Compliant
Qualified to AEC Q101
Applications
Automotive Engine Control
PowerTrain Management
Solenoid and Motor Drivers
Integrated Starter/Alternator
Distributed Power Architectures and VRM
Primary Switch for 12V Systems
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