Shenzhen Sai Collie Technology Co., Ltd.
Shenzhen Sai Collie Technology Co., Ltd.
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FDD3672 - High Power MOSFET Transistor for Advanced Power Electronics Applications
| FET Type | | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 44A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1710 pF @ 25 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 135W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | | |
| Supplier Device Package | TO-252AA | |
| Package / Case |
Product Listing:
ON Semiconductor FDD3672 - N-Channel Power MOSFET
The FDD3672 is a N-Channel power MOSFET manufactured by ON Semiconductor. It offers excellent power dissipation, low gate charge and fast switching speed.
Features:
• 100V drain-source breakdown voltage
• Maximum continuous drain current of 10.2A
• Low gate charge: Qg = 16nC typical
• Maximum drain-source on-state resistance of 0.48Ω
• Internal avalanche energy rated at EAS = 7.3mJ
• Maximum operating junction temperature of 175°C
• Average gate charge: Qg = 16nC typical
• Fast switching speed: tD(on) = 10ns typical
• Lead-free, RoHS-compliant package
