Shenzhen Sai Collie Technology Co., Ltd.
Shenzhen Sai Collie Technology Co., Ltd.
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FDD86102LZ High Power MOSFET Power Electronics Industrial Applications and High-Voltage Automotive Applications
| FET Type | | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 22.5mOhm @ 8A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1540 pF @ 50 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 3.1W (Ta), 54W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | | |
| Supplier Device Package | TO-252AA | |
| Package / Case |
Product Listing:
ON Semiconductor FDD86102LZ N-Channel Power MOSFET
The ON Semiconductor FDD86102LZ is a high-performance N-channel power MOSFET. It features low on-resistance for high-efficiency switching applications.
Features:
• Low on-resistance
• Fast switching speed
• High peak current capability
• High voltage withstand capability
• RoHS Compliant
Specifications:
• Drain-Source Voltage: 100 V
• Gate-Source Voltage: ±20 V
• Drain Current: 75 A
• Drain-Source On-Resistance: 4.2 mΩ
• Gate Charge: 45 nC
• Power Dissipation: 320 W
• Operating Temperature Range: -55°C to +150°C
