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FDS6690A MOSFET Power Electronics 8-SOIC Package Single N-Channel Logic-Level PowerTrench General
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 12.5mOhm @ 11A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 5 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1205 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 8-SOIC | |
Package / Case |
Description
This N-Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
• 11 A, 30 V. RDS(ON) = 12.5 mΩ @ VGS = 10 V RDS(ON) = 17.0 mΩ @ VGS = 4.5 V
• Fast switching speed • Low gate charge
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
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