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FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 128mOhm @ 2.8A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 395 pF @ 75 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.2W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | SOT-223-4 | |
Package / Case |
Product Listing:
ON Semiconductor FDT86244 Mosfet Power Electronics
Description:
The ON Semiconductor FDT86244 is a high-efficiency, low-power MOSFET power electronics device designed to deliver superior performance in a wide range of applications. It offers a high-speed switching frequency with low gate charge and low on-resistance. It is suitable for high-power applications such as motor control, DC-DC conversion, and power management.
Features:
• Low on-resistance: 0.086mΩ typical
• High-speed switching: 4.5V/ns typical
• Low gate charge: 7nC typical
• Operating temperature range: -55°C to 175°C
• Maximum drain-source voltage: 100V
• Maximum drain current: 100A
• Package: TO-220, TO-220F, TO-247, TO-247AD, TO-252, and D2PAK