FCH072N60 High-Performance High-Voltage N-Channel MOSFET Power Electronics for Optimized Power Conversion Efficiency

Product Listing:

FCH072N60
Manufacturer: ON Semiconductor

Parameters:

Type: N-channel MOSFET
Vdss (Drain-Source Voltage): 600V
Id (Continuous Drain Current): 72A
Rds (On Resistance): 0.08Ω
Vgs (Gate-Source Voltage): ±20V
Qg (Gate Charge): 55nC
Pd (Maximum Power Dissipation): 300W
Package: TO-247AC

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FCH072N60 High-Performance High-Voltage N-Channel MOSFET Power Electronics for Optimized Power Conversion Efficiency

FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	72mOhm @ 26A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	125 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5890 pF @ 380 V
FET Feature	-
Power Dissipation (Max)	481W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3

FCH072N60 High-Performance High-Voltage N-Channel MOSFET Power Electronics for Optimized Power Conversion Efficiency

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