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Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 650mOhm @ 6A, 10V | |
Vgs(th) (Max) @ Id | 5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 1676 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 39W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | TO-220F-3 | |
Package / Case |
Product: FDPF12N60NZ MOSFET Power Electronics
Manufacturer: ON Semiconductor
Product Description:
The FDPF12N60NZ is a N-channel MOSFET Power Electronics device from ON Semiconductor. It has a maximum drain-source voltage (VDS) of 600V, a maximum drain current (ID) of 12A and an RDS(on) of 0.58 Ω. This device is designed for high frequency switching applications such as DC-DC converters, motor drives, power supplies, and power converters. It is capable of handling high frequency operation up to 100 kHz. The FDPF12N60NZ is RoHS compliant and has an operating temperature range from -55 to +150 °C.
Features:
- 600V drain-source voltage (Vds)
- 12A drain current (Id)
- 0.58Ω Rds(on)
- High frequency switching capability up to 100 kHz
- RoHS compliant
- Operating temperature range: -55 to +150 °C