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FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Rds On (Max) @ Id, Vgs | 1.21mOhm @ 50A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 190µA | |
Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V | |
Vgs (Max) | +20V, -16V | |
Input Capacitance (Ciss) (Max) @ Vds | 4960 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 4.3W (Ta), 136.4W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 8-HPSOF | |
Package / Case |
Product Listing:
ON Semiconductor FDBL9406-F085T6 Power MOSFET
• Robust Design and Low On-Resistance
• 175°C Junction Temperature
• Low Gate Charge
• Avalanche Rugged Technology
• Fast Switching
• 100% Tested for Gate Threshold Voltage
• 100% Tested for On-Resistance
• RoHS Compliant
• Halogen Free
• 200V Rated Drain-Source Breakdown Voltage
• Low Gate Impedance
• Fast Body Diode
• ESD Protected
• Low Output Capacitance
• Dual N-Channel
• High Power and Current Handling Capacity