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Fairchild Semiconductor FDBL86066-F085 N-Channel Enhancement Mode MOSFET Power Electronics Device

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Country/Region:china
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Fairchild Semiconductor FDBL86066-F085 N-Channel Enhancement Mode MOSFET Power Electronics Device

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Brand Name :onsemi
Model Number :FDBL86066-F085
Place of Origin :original
MOQ :1
Price :Negotiable
Payment Terms :L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :999999
Delivery Time :1-3 days
Packaging Details :standard
Drain to Source Voltage (Vdss) :100 V
Current - Continuous Drain (Id) @ 25°C :185A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :10V
Rds On (Max) @ Id, Vgs :4.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id :4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :69 nC @ 10 V
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Fairchild Semiconductor FDBL86066-F085 N-Channel Enhancement Mode MOSFET Power Electronics Device
FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
69 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3240 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
300W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Supplier Device Package
8-HPSOF
Package / Case

Product Listing:

Product Name: FDBL86066-F085
Manufacturer: ON Semiconductor
Product Type: MOSFET Power Electronics
Max Continuous Drain Current: 8.5A
Max Drain Source Voltage: 60V
Rds On (Max) @ Id: 2.2mOhm @ 10A
Package/Case: 8-DFLA
Mounting Type: Through Hole

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Fairchild Semiconductor FDBL86066-F085 N-Channel Enhancement Mode MOSFET Power Electronics Device

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