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Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 160mOhm @ 13A, 10V | |
Vgs(th) (Max) @ Id | 5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 3185 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 265W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | TO-220-3 | |
Package / Case |
Product Listing: FDP26N40
Manufacturer: ON Semiconductor
Product Description: This is a N-channel MOSFET power transistor with a VDS rating of 400V and an ID rating of 26A. It has an RDS(on) of 0.19Ω and a maximum operating temperature of 175°C. It features a high-speed switching capability, low gate charge and low on-state resistance.
Features:
• N-channel MOSFET power transistor
• VDS rating of 400V
• ID rating of 26A
• RDS(on) of 0.19Ω
• Maximum operating temperature of 175°C
• High-speed switching capability
• Low gate charge
• Low on-state resistance