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FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 160mOhm @ 2.4A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V | |
Vgs (Max) | ±25V | |
Input Capacitance (Ciss) (Max) @ Vds | 1360 pF @ 75 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.3W (Ta), 40W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 8-MLP (3.3x3.3) | |
Package / Case |
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Product Listing:
ON Semiconductor FDMC86261P Power MOSFET
Product Features:
• N-Channel
• 100 V
• 20 A
• 0.025 Ohm
• 3.3 mA @ 10 V
• 175°C Maximum Operating Temperature
• Fast Switching
• Low Gate Charge
• Low On-Resistance
• Low Input Capacitance
• Low Output Capacitance
• ESD Protected
• RoHS Compliant