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FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 6.9mOhm @ 14A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1850 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta), 33W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 8-PQFN (5x6) | |
Package / Case |
The FDMS7680 is an advanced N-Channel MOSFET Power Electronics device. It is housed in an 8-PowerTDFN package, making it ideal for a wide range of applications.The FDMS7680 is designed to provide high efficiency and low switching losses. The device is optimized to provide low gate charge and low output capacitance, making it ideal for switching applications.
The FDMS7680 features a low on-state resistance which can reduce conduction losses and minimize power dissipation, making it an ideal choice for power management applications. The device is also RoHS compliant, making it an environmentally friendly option.
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