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FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 35mOhm @ 5A, 10V | |
Vgs(th) (Max) @ Id | 2V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 1.6W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | SuperSOT™-6 | |
Package / Case |
The FDC653N is a N-channel enhancement mode Field Effect Transistor (FET) designed to maximize power dissipation in a compact SOT-23-6 package. It is a high-efficiency, low on-resistance, low gate-charge MOSFET that features a low input capacitance, fast switching speed, and low gate-to-drain charge.
The FDC653N is ideal for high current, high frequency switching applications such as DC-DC converters, motor drivers, and switching power supplies. It provides very low on-resistance and low gate charge for excellent power dissipation and low switching losses. The FDC653N is RoHS compliant and compatible with lead-free reflow soldering processes.
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