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FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 7.2mOhm @ 28A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 150µA | |
Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 6 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 2635 pF @ 50 V | |
FET Feature | - | |
Power Dissipation (Max) | 83W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 8-PQFN (5x6) | |
Package / Case |
The FDMS86182 is an 8-PowerTDFN package Power MOSFET designed to handle high current applications in automotive and industrial applications. It features a low on-resistance design to minimize conduction losses, and high current capability up to 50A. This device is designed with a low gate charge and low gate resistance to minimize switching losses, and a fast switching speed to increase efficiency. It also features a low reverse transfer capacitance for improved EMI performance. The FDMS86182 is an excellent choice for applications that require high current, low losses, and high EMI performance.
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