Shenzhen Sai Collie Technology Co., Ltd.

Shenzhen Sai Collie Technology Co., Ltd.

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2V7002KT1G MOSFET Power Electronics TO-236-3 N-Channel Enhancement Mode Transistor On Resistance Efficiency Application

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Shenzhen Sai Collie Technology Co., Ltd.
City:shenzhen
Country/Region:china
Contact Person:DANDAN
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2V7002KT1G MOSFET Power Electronics TO-236-3 N-Channel Enhancement Mode Transistor On Resistance Efficiency Application

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Brand Name :onsemi
Model Number :2V7002KT1G
Place of Origin :original
MOQ :1
Price :Negotiable
Payment Terms :L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :999999
Delivery Time :1 - 3 days
Packaging Details :standard
FET Type :N-Channel
Technology :MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :60V
Mounting Type :Surface Mount
Vgs (Max) :±20V
Operating Temperature :-55°C ~ 150°C (TJ)
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2V7002KT1G MOSFET Power Electronics
TO-236-3 N-Channel Enhancement Mode Transistor On Resistance Efficiency Applications

FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
24.5 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
300mW (Tj)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case

MOSFET Power Electronics 2V7002KT1G is a TO-236-3 package type MOSFET. It is a n-channel enhancement mode MOSFET, optimized for switching applications. It has a low on-resistance of 0.0068 ohms, which can reduce power losses in the circuit. It also has a maximum drain-source voltage of 200V and a maximum drain current of 2A. It has a high input impedance and ESD protection, making it suitable for use in high speed switching applications. The package is RoHS compliant, making it an environmentally friendly option. This device is perfect for use in power management and control applications.

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2V7002KT1G MOSFET Power Electronics TO-236-3 N-Channel Enhancement Mode Transistor  On Resistance Efficiency Application

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