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FDD2572 MOSFET Power Electronics
TO-252-3 Transistor High Quality Reliability Low On Resistance Wide Operating Voltage
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 54mOhm @ 9A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1770 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 135W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | | |
Supplier Device Package | TO-252AA | |
Package / Case |
The FDD2572 is a high-voltage, high-current power MOSFET in a TO-252-3 package. It has a drain-source breakdown voltage of 100V and a continuous drain current of 25A. It is an ideal choice for implementing high-power switching applications such as high-frequency switching and motor speed control. The FDD2572 is equipped with a low on-resistance and a low gate-threshold voltage, which allows for reduced power loss and improved efficiency. It also features a fast switching speed and a low gate charge, which helps reduce switching time and improve system performance. Furthermore, it is RoHS compliant and comes with a built-in protection against reverse-bias and electrostatic discharge. The FDD2572 is an ideal choice for the implementation of high-power switching applications in various industries.
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