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NTR5198NLT1G MOSFET Power Electronics
TO-236-3 Package Transistor High Performance Applications
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 155mOhm @ 1A, 10V | |
Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 2.8 nC @ 4.5 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 182 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 900mW (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | SOT-23-3 (TO-236) | |
Package / Case |
This NTR5198NLT1G MOSFET Power Electronics is a 3-pin TO-236-3 package. It offers high efficiency and low on-resistance while operating at a low voltage. It is suitable for applications such as power switches, motor drivers and solenoid drivers. This device has a high breakdown voltage of 30V, which provides a higher level of protection for the system. It also has an optimized gate charge for reduced conduction loss and improved switching performance. The device is an N-channel MOSFET optimized for low voltage switching applications. It is RoHS compliant and is offered in a lead free package. This device is ideal for high frequency switching and can operate at frequencies up to 10MHz.
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