AO6601 60V N-Channel Enhancement MOSFET For Power Electronics Applications

AO6601 30V N-Channel MOSFET Power Electronics

Features:

- 30V N-Channel MOSFET for improved power efficiency and high current switching
- Low on-resistance for low power loss
- Low gate charge for improved switching performance
- Internal ESD protection for improved reliability
- RoHS Compliant

Specifications:

- Drain-Source Voltage: 30V
- Gate-Source Voltage(Max): ±20V
- Drain Current: -20A
- Continuous Drain Current(Tc=25℃): -18A
- Drain-Source On-Resistance(Vgs=10V): 0.0055Ω
- Input Capacitance(Vds=25V, f=1MHz): 135pF
- Operating Temperature: -55°C to +150°C
- Storage Temperature: -55°C to +150°C

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