IRFP460PBF High Performance 600V N Channel MOSFET for Power Electronics

IRFP460PBF High Performance 600V N Channel MOSFET for Power Electronics

The IRFP460PBF is an advanced MOSFET designed to support a wide range of applications. This device features a low on-resistance of 1.3 mΩ, a maximum drain source voltage of 100V, and a maximum drain current of 29A. It also offers a high breakdown voltage of 500V and a maximum junction temperature of 175°C. In addition, it operates at a maximum frequency of 4MHz, making it suitable for high-frequency switching applications. The IRFP460PBF MOSFET offers excellent efficiency and low power dissipation, making it ideal for use in high-power applications.

The IRFP460PBF is a 55V N-Channel MOSFET manufactured by International Rectifier. It is designed for high current, high speed switching applications. The device features a low gate charge for fast switching and low on-resistance for high efficiency. This MOSFET is suitable for a wide range of applications, including DC/DC converters, motor control, and other power management systems.

Features:

- Low gate charge for fast switching
- Low on-resistance for high efficiency
- 55V drain-source voltage
- Continuous drain current of 50A
- Package: TO-247
- Maximum junction temperature of 175°C
- Operating temperature range of -55°C to 175°C

Applications:

- DC/DC converters
- Motor control
- Power management systems
- High-speed switching applications

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