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Product Listing:
IRFI4212H-117P MOSFET
Product Description:
This MOSFET is an advanced high voltage, high speed, and low on-resistance device designed for high performance switching applications. It is built with the latest HEXFET technology, and offers superior efficiency, low gate charge, and fast switching speeds.
Key Features:
• Maximum drain source voltage (VDS): 600V
• Maximum drain current (ID): 112A
• Maximum RDS(on): 0.0095Ω
• Maximum Pulsed Drain Current (IDM): 224A
• Ciss: 1808pF
• Gate Threshold Voltage (VGS): 4V
• Maximum Operating Temperature (Tj): 175°C
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