Shenzhen Sai Collie Technology Co., Ltd.

Shenzhen Sai Collie Technology Co., Ltd.

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SI2304DDS-T1-GE3 MOSFET Power Electronics High-Performance and Cost-Effective Solution

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Shenzhen Sai Collie Technology Co., Ltd.
City:shenzhen
Country/Region:china
Contact Person:DANDAN
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SI2304DDS-T1-GE3 MOSFET Power Electronics High-Performance and Cost-Effective Solution

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Brand Name :Vishay Siliconix
Model Number :SI2304DDS-T1-GE3
Place of Origin :original
MOQ :1
Price :Negotiable
Payment Terms :L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :999999
Delivery Time :1-3 days
Packaging Details :standard
Drain to Source Voltage (Vdss) :30 V
Current - Continuous Drain (Id) @ 25°C :3.3A (Ta), 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :4.5V, 10V
Rds On (Max) @ Id, Vgs :60mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id :2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :6.7 nC @ 10 V
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SI2304DDS-T1-GE3 MOSFET Power Electronics High-Performance and Cost-Effective Solution

Product Description:

The Vishay Siliconix SI2304DDS-T1-GE3 is a N-Channel MOSFET that provides superior power handling in a variety of applications. This MOSFET is designed to offer excellent switching performance, low leakage current, low gate charge, and low on-resistance. The SI2304DDS-T1-GE3 is suitable for use in high power switching, power management, and other power applications.

Features:
• 4.8V gate drive
• Low on-resistance
• Low gate charge
• Low leakage current
• RoHS compliant
• Lead-free

Specifications:
• Drain-Source Voltage (VDS): 30V
• Drain-Source On-State Resistance (RDS(on)): 0.0095 Ohm
• Continuous Drain Current (ID): 12A
• Pulsed Drain Current (IDM): 25A
• Gate-Source Voltage (VGS): -5V to +4.8V
• Power Dissipation (Pd): 3W

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SI2304DDS-T1-GE3 MOSFET Power Electronics High-Performance and Cost-Effective Solution

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