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IRFR7446TRPBF MOSFET High
Performance Power Electronics Device for Maximum Efficiency
Features:
• 100V N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Output Capacitance
• High Avalanche Energy
• High-Speed Switching
• Lead Free Finish/RoHS Compliant
• Halogen and Antimony Free. “Green” Device (Note 1)
• Available in a TO-220 Package
Absolute Maximum Ratings:
• Drain-Source Voltage: 100V
• Gate-Source Voltage: ±20V
• Drain Current: 16A
• Power Dissipation: 60W
• Operating Junction Temperature Range: -55°C to +150°C
• Storage Temperature Range: -55°C to +150°C
• Lead Temperature (soldering, 10sec): 260°C
Thermal Characteristics:
• Thermal Resistance Junction-to-Case (RθJC): 0.75°C/W
• Thermal Resistance Junction-to-Ambient (RθJA): 40°C/W
Electrical Characteristics (at 25
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