Shenzhen Sai Collie Technology Co., Ltd.

Shenzhen Sai Collie Technology Co., Ltd.

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IRF135S203 MOSFET High Power Output and Low On-Resistance for Enhanced Performance

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Shenzhen Sai Collie Technology Co., Ltd.
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Country/Region:china
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IRF135S203 MOSFET High Power Output and Low On-Resistance for Enhanced Performance

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Brand Name :Infineon Technologies
Model Number :IRF135S203
Place of Origin :original
MOQ :1
Price :Negotiable
Payment Terms :L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :999999
Delivery Time :1-3 days
Packaging Details :standard
Drain to Source Voltage (Vdss) :135 V
Current - Continuous Drain (Id) @ 25°C :129A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :10V
Rds On (Max) @ Id, Vgs :8.4mOhm @ 77A, 10V
Vgs(th) (Max) @ Id :4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :270 nC @ 10 V
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IRF135S203 MOSFET High Power Output and Low On-Resistance for Enhanced Performance

Product Name: IRF135S203 MOSFET

Product Description:

The IRF135S203 is a high-performance MOSFET designed for use in a wide variety of applications. This device is an N-channel enhancement type transistor with a low on-resistance and high breakdown voltage. It features a low gate capacitance, low threshold voltage, and high switching speed. It is designed for use in power supplies, motor control, and other high-frequency switching applications.

Product Specifications:

Voltage: 200V

Drain Current: 8A

Drain-Source On-resistance: 83mΩ

Gate Threshold Voltage: 2V

Gate-Source Capacitance: 8.2pF

Operating Temperature Range: -55°C to 150°C

Package: TO-220

Manufacturer: Infineon Technologies

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IRF135S203 MOSFET  High Power Output and Low On-Resistance for Enhanced Performance

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